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Preliminary
Product Description
Stanford Microdevices' SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
SPA-2318
2150 MHz 1 Watt Power Amplifier with Active Bias
Product Features * High Linearity Performance:
+47 dBm Typ. OIP3 at 2140 MHz +21.7 dBm W-CDMA Channel Power at -45 dBc ACP
VC1 VBIAS RFIN VPC2
Active Bias
RFOUT/ VC2
* On-chip Active Bias Control * High Gain: 23 dB Typ. * Patented High Reliability GaAsHBT Technology * Surface-Mountable Plastic Package Applications * W-CDMA Systems * Multi-Carrier Applications
Symbol f0 P 1dB S 21 VSWR OIP3 NF Icc Rth j-l
Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25C, Vcc=5.0V Frequency of Operation Output Power at 1dB Compression Small Signal Gain Input VSWR Output Third Order Intercept Point Power out per tone = +14dBm Noise Figure Device Current
Ibias = 10mA, Ic1 = 70mA, Ic2 = 320 mA
Units MHz dB m dB dB m dB mA C/W
Min. 2110
Typ. 2140 28 23 1.5:1 47 5.0 400 32
Max. 2170
Thermal Resistance (junction - lead)
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.stanfordmicro.com
EDS-101432 Rev B
Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp
2140 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V
Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency -4
S22
Gain vs. Frequency
30 27 24
dB
-10 -16
dB
S11
-22 -28 -34 -40 2.11
S12
21 18 15 2.11
25C -40C 85C
2.12
2.13
2.14
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
P1dB vs Frequency
30
Output Third Order Intercept vs. Frequency (POUT per tone = 14dBm) 52
50
28
dBm dBm
48
25C 85C -40C
46 44 42
25C 85C -40C
26
24 2.11
2.12
2.13
2.14
GHz GHz
2.15
2.16
2.17
40 2.11
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Output Third Order Intercept vs. Tone Power 2.14GHz 52
Device Current vs. Source Voltage
600
Device Current (mA)
50 48
dBm
500 400 300 200 100 0 0
25C -40C 85C
46 44 42 40 38 10 12 14 16 18 20
POUT per tone (dBm)
25C 85C -40C
1
2
3
Vcc (V)
4
5
6
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.stanfordmicro.com
EDS-101432 Rev B
Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp
2140 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V
The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power
Adjacent Channel Power (dBc)
-30 -35 -40 -45 -50 -55 -60 -65 19 20 21 22 23 24 25
Channel Output Power (dBm)
Frequency Small Signal Gain (dB) Ch. Pwr. (dBm) @ -45 dBc ACP Output IP3 (dBm) P1dB (dBm)
2140 M H z 23.4 21.7 45.4* 29.9
*Note: IP3 performance degraded due to Device being tuned for optimal ACP performance
W-CDMA at 2.14 GHz
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.stanfordmicro.com
EDS-101432 Rev B
Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp 2110 - 2170 MHz Schematic
Vcc 10uF Tantalum
56pF 1000pF
Z=63 , 23.5
5.6pF 5.6nH
1 8 7 6 5
2.7nH 6.8K
18 nH 39pF
Z=50 , 27.4
8 7 6 5
18 nH
Z=50 , 13.1
2 3 4
1.5pF 300 ohm 1800pF
1.8pF
1.8pF
Tune for optimal IP3 performance
Tune for optimal ACP performance
.1uF Tantalum
Note: All inductors are Toko LL1608-FS
2110 - 2170 MHz Evaluation Board Layout
Vbias Vcc
10uF Tantalum 56pF Short 5.6nH 2.7nH 1.5pF 5.6pF 1000pF
6.8K
18nH
18nH 39pF
1800pF
1.8pF
Tune for optimal IP3 performance
1.8pF
Tune for optimal ACP performance
300
ECB-101161 Rev. B
Note: All inductors are Toko LL1608-FS
.1uF Tantalum
Vpc
SOIC-8 PA Eval Board
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 4
http://www.stanfordmicro.com
EDS-101432 Rev B
Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp
Pin # 1 2 3 4 5, 6, 7, 8 Function VC 1 V bi as RF In VPC 2 RF Out/VC2 Description VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6).
EPAD
Gnd
Simplified Device Schematic
4 2 1
2
ACTIVE BIAS NETW ORK
5-8
ACTIVE BIAS NETW ORK
3
Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Parameter Supply C urrent (VC1) Supply C urrent (VC2) D evi ce Voltage (VD) Power D i ssi pati on Operati ng Lead Temperature (TL) RF Input Power Storage Temperature Range Operati ng Juncti on Temperature (TJ) Value 150 750 6.0 4.0 -40 to +85 +40 -40 to +150 +150 U nit mA mA V W C mW C C
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 5
http://www.stanfordmicro.com
EDS-101432 Rev B
Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp
Part Number Ordering Information
Part Number SPA-2318 Devices Per Reel 500 Reel Siz e 7"
.035 [.889] .045 [1.143] 4 3 2 1
Package Outline Drawing
.194 [4.93] EXPOSED PAD
XXXX SPA 2318
5 6 7 8 TOP VIEW
.155 [3.937]
.078 [1.969] .236 [5.994]
.061 [1.549]
BOTTOM VIEW
.050 [1.27]
.016 [.406] .061 [1.549] .008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
.194 [4.928] .003 [.076] SIDE VIEW SEATING PLANE SEE DETAIL A
.155 [3.937]
END VIEW
Recommended Land Pattern
PARTING LINE
.15 [3.81]
.025 5 DETAIL A
.24 [6.22] .16 [4.02] .33 [8.42]
Note: XXXX represents the lot code
.05 [1.27] .02 [.60]
.11 [2.71]
Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening the sealed shipping materials.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 6
http://www.stanfordmicro.com
EDS-101432 Rev B

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